Abstract
The sheet resistivity of tin dioxide films deposited by electron-beam evaporation has been studied during annealing, both as a function of time and temperature. The annealing behaviour of SnO2 films under the above two different conditions is consistent. A qualitative interpretation has been given for the decrease and the minimum observed in the resistivity. The increase in resistivity has been confirmed by scanning-electron micrographs. The films were also characterized by x-ray diffractometry.
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Gupta, A., Gupta, P. & Srivastava, V.K. Annealing behaviour of electron-beam deposited tin dioxide films. Bull. Mater. Sci. 6, 1029–1033 (1984). https://doi.org/10.1007/BF02743952
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DOI: https://doi.org/10.1007/BF02743952