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High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure

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Abstract

(InAs)n(GaAs)n short period superlattices (SPSs) have been successfully grown by a continuous MOVPE process on InP substrates. Their structural, optical, and electrical properties have been studied. The periodic structures have been confirmed by x-ray measurements and (InAs)1(GaAs)1 SPSs have been clearly observed by transmission electron microscopic characterization. The optical quality of the material has been tested by 2K photoluminescence and excitonic recombinations have been observed. Mobilities as high as 10700 cm2.V−1.s−1 and 64000 cm2. V−1.s−1 for a sheet concentration of 3 × 1012 cm−2 have been obtained at 300K and 77K, respectively.

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Authors and Affiliations

  1. Laboratoires d’Electronique Philips, 22 Avenue Descartes, 94453, Limeil-Brévannes Cedex, France

    J. P. André & A. Deswarte

  2. Laboratoire de Physique de la Matière Condensée Ecole Normale Supérieure, 24 rue Lhomond, 75005, Paris, France

    E. Lugagne-delpon & P. Voisin

  3. LERMAT-ISMRA URA 1317 CNRS, Universite de Caen-Bd du Maréchal Juin, 14050, Caen, France

    P. Ruterana

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  1. J. P. André
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  2. A. Deswarte
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  3. E. Lugagne-delpon
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  4. P. Voisin
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  5. P. Ruterana
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André, J.P., Deswarte, A., Lugagne-delpon, E. et al. High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure. J. Electron. Mater. 23, 141–146 (1994). https://doi.org/10.1007/BF02655260

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  • DOI: https://doi.org/10.1007/BF02655260

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