Abstract
We describe a method to determine the flow impedance of a submonolayer of a normal4He film on a strong binding substrate. The flow impedance should be a characteristic of the substrate and we hope to use it to detect surface changes that occur at low temperatures. We describe preliminary measurements of the flow rate as a function of the chemical potential difference, Δμ, along the flow path. The differential flow impedance changes radically with Δμ which we ascribe to the thickness of the free liquid layer going to zero at one end of the flow path.
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Bloss, E., Wyatt, A.F.G. Flow of submonolayer helium films. Czech J Phys 46 (Suppl 1), 435–436 (1996). https://doi.org/10.1007/BF02569633
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DOI: https://doi.org/10.1007/BF02569633