Abstract
The dependence of the electrical conductivity, σ, on the hydrogen concentration and crystallographic orientation has been investigated using single crystals of HxV2O5, which were grown by the Bridgeman method and doped with hydrogen within the solid solubility in the α phase by the spillover technique. The temperature dependence of σ showed the feature of diffusive hopping of thermally activated electrons above ∼180 K and variable range hopping below ∼180 K. The dependence of σ on the crystallographic orientation was little different from that of V2O5. The change in σ with the hydrogen concentration was not monotonic; σ increases withx up tox }-0.06, but decreases abovex }-0.06. This behaviour can be explained based on the competition between the increase in the carrier density and the depression of the mobility of carriers with increasingx.
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Shimoda, M., Yoshikawa, A. & Yagisawa, K. Electrical conductivity of α-H x V2O5 (X=0.00-0.27): Dependence of hydrogen concentration and orientation. J Mater Sci 29, 478–481 (1994). https://doi.org/10.1007/BF01162510
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DOI: https://doi.org/10.1007/BF01162510