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A very high sensitivity phototransistor structure

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References

  1. J. Nishizawa and Y. Watanabe, Japanese Patent No. 205068 (Application Field Dec. 20th in 1950) [in Japanese]

  2. J. Nishizawa and Y. Watanabe, Japanese Patent No. 221218 (Application Field June 30th in 1953) [in Japanese]

  3. W. Shockley, Bell System Tech. J.,28 (3), 435–489 (1949)

    Google Scholar 

  4. H. Kromer, Arch. Elec. Ubert.,8, 223–228, 363–369, 499–504 (1954)

    Google Scholar 

  5. Y. Watanabe and J. Nishizawa, Japanese Patent No. 267836 (Application Field Dec. 6th in 1954) [in Japanese]

  6. J. Nishizawa and Y. Watanabe, Sci. Rep. of Research Institute of Electrical Communication, Tohoku University, B-(E.C.),10 (2), 75–89 (1958) [in Japanese]

    Google Scholar 

  7. For a review, see R.A. Milano, P.D. Dapkus and G.E. Stillman, IEEE Trans. Electron Devices,ED-29 (2), 266–274 (1982)

    Google Scholar 

  8. C.Y. Chen, A.Y. Cho, P.A. Garbinski and C.G. Bethea, 5th Int. Conf. on Vapor Growth and Epitaxy (ICVGE-5), Abstract, 62–63, Cororado, Calif., July 19–24 (1981)

  9. C.Y. Chen, A.Y. Cho, P.A. Garbinski, C.G. Bethea and B.F. Levine, Appl. Phys. Lett.,39 (4), 340–342 (1981)

    Google Scholar 

  10. C.Y. Chen, Appl. Phys. Lett.,39 (12), 979–981 (1981)

    Google Scholar 

  11. C. Y. Chen, A. Y. Cho, P. A. Garbinski and C. G. Bethea, IEEE Electron Device Lett.,EDL-2 (11), 293–295 (1981)

    Google Scholar 

  12. J.M. Shannon, Appl. Phys. Lett.,35 (1), 63–65 (1979)

    Google Scholar 

  13. N. Georgoulas, IEEE Electron Device Lett.,EDL-3 (3), 61–63 (1982)

    Google Scholar 

  14. J.A. Barnard, C.E.C. Wood and L.F. Eastman, Proc. 1981 GaAs and Related Compounds Conf., Tokyo, Japan, (The Institute of Physics, Engalnd) (1981)

    Google Scholar 

  15. J.A. Bernard, F.E. Najjar and L.F. Eastman, IEEE Trans. Electron Devices,ED-29 (9), 1396–1403 (1982)

    Google Scholar 

  16. J. Nishizawa, T. Terasaki and J. Shibata, presented at International Electron Devices Meeting (IEDM), (Washington D.C., 1972); presented at the 3rd European Solid State Device Research Conf. (ESSDERC), (France, 1973); Tech. Rep. of Res. Inst. of Elec. Comm. at Tohoku University,TR-36, 1973; IEEE Trans. Electron Devices,ED-22 (4), 185–197 (1975)

    Google Scholar 

  17. J. Nishizawa, T. Tamamushi, K. Nonaka and S. Suzuki, IEEE Electron Device Letters,EDL-6 (1) 17–19 (1985)

    Google Scholar 

  18. J. Nishizawa, T. Tamamushi and S. Suzuki, Semiconductor Technologies 1983, JARECTVol. 8, edited by J. Nishizawa (Ohm & North-Holland, 1983), pp. 219–242 (Tokyo)

  19. T. Tamamushi, K. Nonaka and J. Nishizawa, National Convention Record of IEE Japan, symposium on self-turn-off type power semiconductor devices and its application, session 2–3, Tokyo, March 30, 1984 [in Japanese]

  20. J. Nishizawa, K. Nonaka and T. Tamamushi, Semiconductor Technologies 1984, JARECTVol. 13, edited by J. Nishizawa (Ohm & North-Holland, 1984) pp. 89–120 (Tokyo)

  21. J. Nishizawa, T. Tamamushi and K. Nonaka, Proceedings of the 16th Int. Conf. on Solid State Devices and Materials (1984 ICSSDM), 321–324, Kobe, Japan (1984)

  22. J. Nishizawa, T. Tamamushi and T. Ohmi, IEEE Trans. on Electron Devices,ED-27, 1970–1977 (1979)

    Google Scholar 

  23. J. Nishizawa, Semiconductor Science and Technology, edited by J. Nishizawa (Kogyo Chosakai, Tokyo)Vol. 18, pp. 3–25 (1982) [in Japanese]

    Google Scholar 

  24. J. Nishizawa, T. Tamamushi and K. Nonaka, to be publishes in J. Appl. Phys. in 1985

  25. J. Nishizawa et al. submitted to IEEE Trans. on Electron Devices

  26. H. Kroemer, J. Vac. Sci. Technol.B1 (2), April–June 1983

  27. For a review, see C.O. Bozler and G.D. Alley, Proc. IEEE70, 46 (1982)

    Google Scholar 

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Nishizawa, J., Nonaka, K. & Tamamushi, T. A very high sensitivity phototransistor structure. Int J Infrared Milli Waves 6, 649–673 (1985). https://doi.org/10.1007/BF01011944

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