Abstract
We assess several models for the environment of the P b center (Si dangling bond center) at the interface of Si(111) with its oxide. The comparison of hyperfine constants observed with those predicted using large cluster models favors a local structure in which there is an Si-Si bond within the oxide close to the Si dangling bond. Such Si-Si bonds are also suggested by a number of other experiments and are consistent with the “reactive layer” model proposed to rationalize a range of oxidation studies.
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Ong, C.K., Harker, A.H. & Stoneham, A.M. Environment of the P b center at the Si(111)/oxide interface. Interface Sci 1, 139–146 (1993). https://doi.org/10.1007/BF00203603
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DOI: https://doi.org/10.1007/BF00203603