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Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor

  • Physics of Semiconductor Devices
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Abstract

Y2O2S luminophors doped with Er3+ and Yb3+ ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m2 of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y2O2S compound doped with 2 at % Er3+ ions and 6 at % Yb3+ ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is η = 1.2 lm/W at an applied voltage of 1.5 V.

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References

  1. A. Polman, J. Appl. Phys. 82, 1 (1997).

    Article  ADS  Google Scholar 

  2. M. Benatson, B. Capoen, M. Boazaoui, et al., Appl. Phys. Lett. 66, 428 (1997).

    Article  ADS  Google Scholar 

  3. A. N. Georgobiani, A. N. Gruzintsev, and T. V. Nikiforova, Neorg. Mater. 42, 876 (2006).

    Google Scholar 

  4. A. N. Georgobiani, A. N. Gruzintsev, K. Bartkhou, and P. Benalul, Neorg. Mater. 40, 840 (2004).

    Article  Google Scholar 

  5. A. N. Georgobiani, A. N. Gruzintsev, T. V. Nikiforova, et al., Neorg. Mater. 38, 1008 (2002).

    Article  Google Scholar 

  6. Y. H. Wang and J. Ohwaki, Appl. Phys. Lett. 63, 3268 (1993).

    Article  ADS  Google Scholar 

  7. J. Silver, M. I. Martinez-Rubio, T. G. Ireland, et al., J. Phys. Chem. B 105, 948 (2001).

    Article  Google Scholar 

  8. L. Luo, X. X. Zhang, K. F. Li, et al., Adv. Mater. 16, 1664 (2004).

    Article  Google Scholar 

  9. J. H. Yang, L. Y. Zhang, L. Wen, et al., J. Appl. Phys. 95, 3020 (2004).

    Article  ADS  Google Scholar 

  10. S. F. Lim, R. Riehn, W. S. Ryu, et al., Nano Lett. 6, 169 (2006).

    Article  ADS  Google Scholar 

  11. G. De, W. Qin, J. Zhang, et al., J. Lumin. 119–120, 258 (2006).

    Article  Google Scholar 

  12. A. M. Peris, O. A. Serra, and M. R. Davolos, J. Alloys Compd. 374, 181 (2004).

    Article  Google Scholar 

  13. V. P. Gapontsev, V. P. Minaev, V. I. Savin, and I. É. Samartsev, Kvantovaya Élektron. (Moscow) 32, 1003 (2002).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Institute of Problems of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    A. N. Gruzintsev

  2. Institute des NanoSciences, 75252, Paris Cedex 05, France

    C. Barthou & P. Benalloul

Authors
  1. A. N. Gruzintsev
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  2. C. Barthou
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  3. P. Benalloul
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Correspondence to A. N. Gruzintsev.

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Original Russian Text © A.N. Gruzintsev, C. Barthou, P. Benalloul, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 3, pp. 365–369.

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Gruzintsev, A.N., Barthou, C. & Benalloul, P. Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor. Semiconductors 42, 358–362 (2008). https://doi.org/10.1134/S1063782608030226

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  • DOI: https://doi.org/10.1134/S1063782608030226

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