Conclusion
In this study, the TID effects on the FTJs with HfO2/Al2O3 dielectric bilayer are investigated. The P-V, C-V, I-V, endurance, and read current characteristics are analyzed before and after radiation. The I-V, P-V and endurance characteristics show very little change after the total dose of up to 1 Mrad (Si), which means the ferro-electricity is not affected by the TID. However, owing to the positive fixed charges formed in Al2O3 film and the interface traps accumulation during the radiation, the read current of the programed device is increasing, while the read current of the erased device is reducing after radiation. These findings are useful in understanding the radiation mechanisms of HfO2/dielectric bilayer-based FTJs and can promote the application of FTJs in the nuclear and aerospace environments.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 61704188, 61634008).
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Yang, X., Xu, Y., Bi, J. et al. Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci. China Inf. Sci. 65, 169403 (2022). https://doi.org/10.1007/s11432-021-3269-4
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DOI: https://doi.org/10.1007/s11432-021-3269-4