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The simulation on absorption properties of metamaterial/GaAs/electrode layer hybrid structure based Terahertz photoconductive detector

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Abstract

Terahertz (THz) photodetectors have attracted great attention from scientists worldwide for their application in security checking, biomedical treatment and astronomical observation of remote stars and distant galaxies. As a typical THz detector, extrinsic GaAs based photoconductive detector is facing critical technical bottlenecks in the epitaxial growth of sufficiently thick and high-quality GaAs absorption layer. In this work, a novel THz photoconductive detector based on metamaterial/GaAs/electrode layer hybrid structure was designed and simulated. By setting the periodic split ring resonator (SRR) structure as 88 μm pitch with 8 μm width, the absorption peaks exist at the wavelength of about 142 and 367 μm, which originate from the resonant cavity and the SRR dipole resonance effect, and the novel device shows a significant enhancement compared with the conventional GaAs photoconductive detector. Thus, the necessary thickness of GaAs absorption-layer is largely reduced, and the resonant absorption peak can be modulated by changing the thickness of absorption layer. This work provides a novel device structure which can solve the critical epitaxial growth bottleneck of GaAs photoconductive detector and used for the astronomical observation, security check, etc.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 61705201, and 61404120), Shanghai Rising-Star Program (Grant No. 17QB1403900), Young Elite Scientists Sponsorship Program by CAST (Grant No. 2018QNRC001), Shanghai Sailing Program (Grant No. 17YF1418100), and Shanghai Youth Top-Notch Talent Development Program.

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Author notes

  1. Yulu Chen and Xiong Yang contributed equally to this work.

Authors and Affiliations

  1. The 50th Research Institute of China Electronics Technology Group Corporation, 318 Chang He Road, Shanghai, 200331, China

    Yulu Chen, Wulin Tong, Bingbing Wang, Chuansheng Zhang, Haoxing Zhang, Yongshan Hu, Ming Pan & Xiaodong Wang

  2. Shanghai Institute of Microsystem and Information Technology, 865 Changning Road, Shanghai, 200050, China

    Xiong Yang

  3. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China

    Xiong Yang

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  1. Yulu Chen
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  2. Xiong Yang
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  3. Wulin Tong
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  4. Bingbing Wang
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  7. Yongshan Hu
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  8. Ming Pan
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  9. Xiaodong Wang
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Correspondence to Xiaodong Wang.

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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 18.

Guest edited by Paolo Bardella, Weida Hu, Slawomir Sujecki, Stefan Schulz, Silvano Donati, Angela Traenhardt.

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Chen, Y., Yang, X., Tong, W. et al. The simulation on absorption properties of metamaterial/GaAs/electrode layer hybrid structure based Terahertz photoconductive detector. Opt Quant Electron 51, 118 (2019). https://doi.org/10.1007/s11082-019-1834-8

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