Abstract
The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al1−x TM x As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al0.9375 TM 0.0625As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al0.9375 TM 0.0625As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.
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Boutaleb, M., Doumi, B., Mokaddem, A. et al. The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities. J Supercond Nov Magn 31, 2157–2163 (2018). https://doi.org/10.1007/s10948-017-4461-2
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DOI: https://doi.org/10.1007/s10948-017-4461-2