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Spectroscopic ellipsometry study of In2O3 thin films

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Abstract

In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 °C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

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Acknowledgements

This work is supported in part by grant from the NITECH 21st Century COE program for “World Ceramics Center for Environmental Harmony” and the JFCC research grant A 1927.

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Correspondence to S. Tanemura.

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Miao, L., Tanemura, S., Cao, Y.G. et al. Spectroscopic ellipsometry study of In2O3 thin films. J Mater Sci: Mater Electron 20 (Suppl 1), 71–75 (2009). https://doi.org/10.1007/s10854-007-9447-6

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  • DOI: https://doi.org/10.1007/s10854-007-9447-6

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