Abstract
Improvements in the quality and yield of semiconductor devices will rely on characterization methods that are informative, nondestructive, convenient, easy to use, and inexpensive. Ideally, one would like to perform the characterization procedure at room temperature on entire wafers, possibly even before the structure is removed from the growth chamber. Because of their simplicity and proven ability, the contactless electro-modulation methods of photoreflectance and contactless electroreflectance are ideally suited for this purpose. Modulation spectroscopy has already been applied to examine such devices as heterojunction bipolar transistors, pseudomorphic high-electron-mobility transistors, quantum-well lasers, vertical cavity surface-emitting lasers, multiple-quantum-well infrared detectors, superlattice optical mirrors, resonant tunneling structures, solar cells, and metal-oxide-semiconductor configurations.
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Pollak, F.H., Qiang, H., Yan, D. et al. Analyzing semiconductor devices using modulation spectroscopy. JOM 46, 55–59 (1994). https://doi.org/10.1007/BF03222585
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DOI: https://doi.org/10.1007/BF03222585