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Effect of carrier injection into MESFET substrates : comparison of MESFET on a semi-insulating buffer, MESFET on a P substrate, and substrate-less MESFET

Effet de l’injection de porteurs dans les substrats de mesfet. comparaison des mesfet À couche tampon en silicium, À substrat de type p ou sans substrat

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Abstract

The carrier injection from the active-layer of the submicron-gate-lengthMesfet into the buffer-layer, or substrate in general, is studied by means of a two-dimensional computer simulation in which the energy conservation equation is simultaneously solved with the carrier conservation equation and Poisson’s equation. The mobility, electron temperature and energy relaxation time are treated as energy dependent parameters. This model is capable of simulating the non-stationary conditions associated with the submicron-gate-length devices. The effect of the carrier injection on the I-V characteristics as well as on the small-signal parameters is investigated by simulating twoMesfet structures; the first is aMesfet on a perfect buffer-layer while the second is a symmetricalMesfet which has no substrate. It is found out that the drain current is increased by the carrier injection, whereas the transconductance is reduced due to the increase of the device dynamic range. TheMesfet with an interfacial potential barrier is also simulated. It exhibits characteristics intermediate between those of the other two devices.

Résumé

L’injection de porteurs à partir de la couche active d’un transistor à effet de champ à barrière de Schottky (Mesfet) à longueur de grille submicrométrique dans la couche tampon ou dans le substrat, est étudiée à l’aide d’une simulation numérique bidimensionnelle dans laquelle l’équation de conservation de l’énergie, l’équation de la conservation des porteurs et l’équation de Poisson sont résolues simultanément. La mobilité et la température électroniques ainsi que le temps de relaxation de l’énergie sont traités en tant que paramètres indépendants. Ce modèle permet de simuler les conditions non stationnaires associées aux dispositifs à grilles submicroniques. L’effet de l’injection de porteurs sur les caractéristiques courant-tension ainsi que sur les paramètres en régime de petit signal est étudié en simulation sur deux structures : unMesfet sur couche tampon parfaite et unMesfet symétrique dépourvu de substrat. Le courant de drain est augmenté par l’injection de porteurs, tandis que la transconductance est réduite du fait de l’augmentation de la portée dynamique du dispositif. La simulation duMesfet à barrière de potentiel interfaciale montre que ce dispositif a des caractéristiques intermédiaires à celles des deux autres.

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Abbreviations

Cgs :

Gate-to-source capacitance

E :

Electric field

f t :

Current-gain-cutoff frequency

g d :

Output conductance

g m :

Transconductance

J :

Conduction current density (drift + diffusion)

K:

Boltzmann constant

n :

Free electron density

N a :

Acceptor density

N d :

Donor density

q :

Electron charge

t :

Time

T(e) :

Electron temperature (energy dependant)

v :

Electron velocity

Vbi :

Built-in potential of the Schottky junction

Vds :

Drain-to-source voltage

V g :

The external voltage applied to the gate

V p :

The pinch-off voltage

ε:

Permittivity

e :

Average electron energy (kinetic + potential)

τ(e) :

Energy relaxation time (energy dependant)

μ(e) :

Electron mobility (energy dependant)

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  1. Dept. of Electrical and Computer Eng., The University of Texas at Austin, 78712, Austin, Texas, USA

    Samir El-Ghazaly & Tatsuo Itoh

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  1. Samir El-Ghazaly
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  2. Tatsuo Itoh
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El-Ghazaly, S., Itoh, T. Effect of carrier injection into MESFET substrates : comparison of MESFET on a semi-insulating buffer, MESFET on a P substrate, and substrate-less MESFET. Ann. Télécommun. 43, 415–422 (1988). https://doi.org/10.1007/BF02999711

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  • DOI: https://doi.org/10.1007/BF02999711

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