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Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films

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Abstract

Leakage behavior and distortion of the polarization hysteresis loop in ferroelectric thin films are analyzed by applying a totally depleted asymmetric back-to-back Schottky model, with the Pt/Pb (Zr, Ti) O3/Pt (Pt/PZT/Pt) sandwich structural thin film capacitor as an example. Some interesting phenomena resulting from the asymmetric interfaces, such as the leakage current level, the flat-band voltage, the disclosure of the hysteresis loop, and the change in the remanent polarization and coercive field, as well as the vertical drift of the polarization hysteresis loop, are discussed in detail. The calculated results are also verified with experiments.

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Authors and Affiliations

  1. Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 200050, Shanghai, China

    Lirong Zheng, Chenglu Lin, Huaping Xu & Shichang Zou

  2. Department of Electrical Engineering, Faculty of Engineering Sciences, Osaka University, 560, Osaka, Japan

    Okuyama Masanori

Authors
  1. Lirong Zheng
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  2. Chenglu Lin
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  3. Huaping Xu
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  4. Shichang Zou
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  5. Okuyama Masanori
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Project supported by Shanghai Research Center for Applied Physics.

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Zheng, L., Lin, C., Xu, H. et al. Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films. Sci. China Ser. E-Technol. Sci. 40, 126–134 (1997). https://doi.org/10.1007/BF02916944

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  • DOI: https://doi.org/10.1007/BF02916944

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