Abstract
Following physicochemical analysis, a kinetic model is described with a scheme of reactions in order to predict the growth rate and the compositional aspects of the ternary epitaxial layers Ga x In1 −x As grown from Ga-In-As-Cl-H vapour phase. Theoretical expressions for the deposition rate have been derived in terms of experimental growth parameters and the relationship between growth kinetics and compositional aspects is investigated. Good agreement is obtained between the layer composition calculated based on the proposed model and the experimental values reported in the literature.
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Mani, V.N. Compositional aspects of the vapour-phase epitaxial growth of GaInAs layers from Ga-In-As-H-Cl system. Bull. Mater. Sci. 17, 469–478 (1994). https://doi.org/10.1007/BF02757891
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DOI: https://doi.org/10.1007/BF02757891