Abstract
Using low-temperature (4.2–78 K) photoluminescence, we study the processes of defect formation in silicon films on sapphire irradiated with high-energy particles (electrons, γ-quanta of60Co). It is established that carbon atoms, as a residual process impurity, participate in the formation of luminescence centers stable up to annealing temperatures of about 550 K. For carbon-containing centers we reveal a shift in the spectral lines relative to their position in spectra of single-crystal silicon. It is proposed that this spectral shift is associated with the presence of internal stresses of about 5·108 N/m2 in the silicon films.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev,Defects in Silicon and on Its Surface [in Russian], Moscow (1990).
N. S. Kuznetsov and G. G. Solov'ev,Radiation Stability of Silicon [in Russian], Moscow (1989).
M. Suezawa and H. K. Katayama-Yoshida (eds.), Defects in Semiconductors 18: Proc. 18th Intern. Conf. on Defects in Semiconductors: Sendai, Japan, 1995, Trans. Tech. Public., Switzerland, 1–4 (1995).
J. P. Colinge, V. S. Lysenko, and A. N. Nazarov (eds.),Physical and Technical Problems of SOI Devices: NATO ASI Ser. 3, High Technology, Kluwer Academic Publishers, London, 4 (1994).
A. V. Mudryi, A. I. Patuk, I. A. Shakin, F. P. Korshunov, and V. A. Zuev,Mater. Chem. Phys.,45, 185–188 (1996).
A. V. Mudryi, F. P. Korshunov, T. P. Larionova, A. I. Patuk, and I. A. Shakin,Proc. Int. Symp. Ion Implant. Sci. and Technol., Technical University, Lublin (1997), pp. 139–143.
V. S. Papkov and M. B. Tsybul'nikov,Epitaxial Silicon Layers on Dielectric Substrates and Devices Based on Them [in Russian], Moscow (1979).
S. Zi (ed.),Technology of SBIS [Russian translation], Moscow (1986).
R. Sauer, J. Weber, J. Stolz, E. R. Weber, K. H. Kusters, and H. Alexander,Appl. Phys.,A36, 1–13 (1985).
M. A. Vouk and E. C. Lightowlers,J. Lumin.,15, 357–384 (1977).
I. Balslev,Phys. Rev.,143, 636–647 (1966).
V. S. Gorelik, R. N. Khashimov, A. P. Vidalov, and V. N. Mikhnov,Kratk. Soobshch. Fiz.,11, 18–24 (1981).
R. Sauer,Mater. Res. Soc. Symp. Proc.,46, 507–518 (1985).
V. D. Tkachev and A. V. Mudryi,Inst. Phys. Conf. Ser., No. 31, 231–243 (1977).
Additional information
Institute of Solid-State Physics and Semiconductors, National Academy of Sciences of Belarus, 17, P. Brovka Str., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskefii, Vol. 66, No. 3, pp. 383–386, May–June, 1999.
Rights and permissions
About this article
Cite this article
Korshunov, F.P., Larionova, T.P., Mudryi, A.V. et al. Luminescence of silicon films on sapphire irradiated with high-energy particles. J Appl Spectrosc 66, 410–414 (1999). https://doi.org/10.1007/BF02676773
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02676773