Abstract
The materials properties of Ti-W, sputter deposited in pure Ar, and Ti-W-N deposited in Ar-N2 mixtures containing up to 50% N2 have been reported. Films with N contents between 0 and 45 at.% have been produced. The W/Ti ratio in the nitrided alloy has been varied from that corresponding to pure W, to that of pure Ti. The metastable ter-nary phase diagram Ti-W-N was composed from data presented in this paper and lit-erature data. For low N contents (up to about 20 at.%) the film consists of a metastable solid solution of N in bcc Ti-W. For high N contents (from about 35 to 45 at.%). We observed the film to consist of an fcc ternary Ti-W nitride. The barrier performance was evaluated in an Al-Cu metallization to TiSi2/Si contacts by Auger electron spectroscopy and junction leakage measurements. In clean sputtering environments, we need to cre-ate the ternary nitride to form a reliable barrier. Adding some N to “stuff” the grain boundaries of the bcc phase, or contaminating the Ti-W surface by an exposure to at-mosphere, was found to be less effective in producing a reliable barrier.
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References
G. J.van Gurp, J. Appl. Phys.44, 2040 (1973).
J. L. Murray, and A. J. McAlister, “Binary Alloy Phase Diagrams,” ed. Th. B. Massalsky (American Society for Metals, Ohio 1986).
H. Sankur, J. O. McCaldin and J. Devaney, Appl. Phys. Lett.22, 64 (1973).
M. Finetti, P. Ostoja, S. Solmi and G. Soncini, Solid State Electron.23, 255 (1980).
M. Mori, IEEE Trans. Electron DevicesED27, 2051 (1980).
P. S. Ho, Thin Solid Films96, 301 (1982).
R. S. Nowicky, and M.-A Nicolet, Thin Solid Films96, 317 (1982).
S. P. Murarka, “Silicides for VLSI Applications” (Ac. Press, New York, 1983).
G. Higelin, A. Kohlhase, H. Oppolzer and W. Panker, internal report, (Siemens AG, Munich, Germany 1987).
I. J. M. M. Raaijmakers, “Fundamental Aspects of Reactions in Titanium-Silicon Thin Films for IC Technology,” Thesis (Eindhoven University of Technology, Eindhoven, the Netherlands, 1989).
I. J. M. M. Raaijmakers, L. J. van IJzendoorn, A. M. L. Theunissen and K.-B. Kim, Mat. Res. Soc. Symp. Proc.146, 267 (Mater. Res. Soc, Pittsburgh, 1989).
I. J. M. M. Raaijmakers and K.-B Kim, J. Appl. Phys.67, 6255 (1990).
H. Norström, S. Nygren, P. Wiklund, M. Östling, R. Buchta and C. S. Petersson, Vacuum35, 547 (1985).
M. Östling, S. Nygren, C. S. Petersson, H. Nörstrom, R. Buchta, H.-O Blom and S. Berg, Thin Solid Films145, 81 (1986).
C. T. So, E. Kolawa, X.-A Zhao, E. T-S. Pan and M.-A. Nicolet, J. Appl. Phys.64, 2787 (1988).
C. T. So, E. Kolawa, X.-A. Zhao, E. T-S. Pan and M.-A Nicolet, Thin Solid Films153, 507 (1987).
M.-A. Nicolet, Thin Solid Films52, 415 (1978).
C. J. Palmström, J. W. Mayer, B. Cunningham, D. R. Campbell and P. A. Totta, J. Appl. Phys. 58, 3444 (1985).
P-H. Chang, H-Y Liu, J. A. Keenan, J. M. Anthony and J. G. Bohlman, J. Appl. Phys.62, 2485 (1987).
J. O. Olowafe, C. J. Palmström, E. G. Colgan and J. W. Mayer, J. Appl. Phys.58, 3440 (1985).
S. E. Babcock and K. N. Tu, J. Appl. Phys.53, 6898 (1989); ibid.59, 1599 (1986).
R. S. Nowicki, J. M. Harris, M.-A. Nicolet and I. V. Mitchell, Thin Solid Films69, 53 (1980).
C. Canali, G. Celotti, F. Fantini and E. Zanoni, Thin Solid Films88, 9 (1982).
C. Canali, F. Fantini and E. Zanoni, Thin Solid Films97, 325 (1982).
A. J. M. Nellissen and R. A. M. Wolters, internal report, Philips Res. Lab. (Eindhoven, the Netherlands 1985).
J. M. Oparowski, R. D. Sisson and R. R. Biederman, Thin Solid Films153, 313 (1987).
P. B. Ghate, J. C. Blair, C. R. Fuller and G. E. McGuire, Thin Solid Films53, 117 (1978).
J. R. Hauser, N. A. Masuari and M. A. Littlejohn, Mat. Res. Soc. Symp Proc.146, 15, (Mat. Res. Soc, Pittsburgh 1989).
G. G. Stoney, Proc. Roy. Soc. (London)A82, 172 (1909).
I. J. M. M. Raaijmakers, A. H.van Ommen and A. H. Reader, J. Appl. Phys.65, 3896 (1989).
A. H. Reader, I. J. M. M. Raaijmakers and H. J. W. van Houtum, Inst. Phys. Conf. Ser.87 (Microsc. Semicond. Mater. (1987)), 523 (1987).
L. E. Davis, N. C. McDonald, P. W. Palmberg, G. E. Riach and R. E. Weber, “Handbook of Auger Electron Spectroscopy,” (Physical Electronics, Eden Prairie, Minnesota 1978).
A. S. Bhansali, I. J. M. M. Raaijmakers, B. J. Burrow, R. Sinclair, and A. E. Morgan, in preparation.
H. A. Wriedt and J. L. Murray, “Binary Alloy Phase Diagrams,” ed. Th. B. Massalsky (Am. Soc. Metals, Ohio 1986).
R. P. Elliott, “Constitution of Binary Alloys,” 1st suppl., (McGraw Hill, New York 1965).
M. Hansen, “Constitution of Binary Alloys,” (McGraw Hill, New York 1958).
R. C. Ellwanger and J. M. Towner, Thin Solid Films161, 289 (1988).
G. Lemperière and J. M. Poitevin, Thin Solid Films111, 339 (1984).
L. D. Hartsough, A. Koch, J. Moulder and T. Signum, J. Vac. Sci. Technol.17, 392 (1980).
M. Mill, Solid State Technol.23, 53 (1980).
J. A. Thornton, Thin Solid Films54, 23 (1978).
J. L. Murray, Bull. Alloy Phase Diagrams2, 192 (1981).
H. J. Goldschmidt, “Interstitial Alloys” (Butterworths, London 1967).
A. S. Bhansali, I. J. M. M. Raaijmakers, R. Sinclair, A. E. Morgan, B. J. Burrow and M. Arst, to be published in Proc. Mater. Res. Soc. Symp. Proc. (Mater. Res. Soc, Pittsburgh, 1990).
W. Sinke, G. P. A. Frijlink and F. W. Saris, Appl. Phys. Lett.47, 471 (1985).
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Raaijmakers, I.J., Setalvad, T., Bhansali, A.S. et al. Microstructure and barrier properties of reactively sputtered Ti-W nitride. J. Electron. Mater. 19, 1221–1230 (1990). https://doi.org/10.1007/BF02673336
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DOI: https://doi.org/10.1007/BF02673336