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HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

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Abstract

We report the growth of HgCdTe on (552)B CdZnTe by metalorganic vapor phase epitaxy (MOVPE). The (552) plane is obtained by 180 rotation of the (211) plane about the [111] twist axis. Both are 19.47 degrees from (111), but in opposite directions. HgCdTe grown on the (552)B-oriented CdZnTe has a growth rate similar to the (211)B, but the surface morphology is very different. The (552)B films exhibit no void defects, but do exhibit ∼40 μm size hillocks at densities of 10–50 cm−2. The hillocks, however, are significantly flatter and shorter than those observed on (100) metalorganic vapor phase epitaxy (MOVPE) HgCdTe films. For a 12–14 μm thick film the height of the highest point on the hillock is less than 0.75 μm. No twinning was observed by back-reflection Laue x-ray diffraction for (552)B HgCdTe films and the x-ray double crystal rocking curve widths are comparable to those obtained on (211)B films grown side-by-side and with similar alloy composition. Etch pit density (EPD) measurements show EPD values in the range of (0.6–5)×105 cm−2, again very similar to those currently observed in (211)B MOVPE HgCdTe. The transport properties and ease of dopant incorporation and activation are all comparable to those obtained in (211)B HgCdTe. Mid-wave infrared (MWIR) photodiode detector arrays were fabricated on (552)B HgCdTe films grown in the P-n-N device configuration (upper case denotes layers with wider bandgaps). Radiometric characterization at T=120–160 K show that the detectors have classical spectral response with a cutoff wavelength of 5.22 μm at 120 K, quantum efficiency ∼78%, and diffusion current is the dominant dark current mechanism near zero bias voltage. Overall, the results suggest that (552)B may be the preferred orientation for MOVPE growth of HgCdTe on CdZnTe to achieve improved operability in focal plane arrays.

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References

  1. S.J.C. Irvine,Narrow-Gap II–VI Compounds for Optoelectronic and Electromagnetic Applications, ed. P. Capper, (London: Chapman & Hall, 1997), pp. 71–96.

    Google Scholar 

  2. P. Mitra, S.L. Barnes, F.C. Case, M.B. Reine, P. O'Dette, R. Starr, A. Hairston, K. Kuhler, M.H. Weiler, and B.L. Musicant,J. Electron. Mater. 26, 482 (1997).

    CAS  Google Scholar 

  3. C.D. Maxey, C.L. Jones, N.E. Metcalfe, R.A. Catchpole, N.T. Gordon, A.M. White, and C.T. Elliot,SPIE Proc. 3122, 453 (1997).

    Article  CAS  Google Scholar 

  4. M.B. Reine, A. Hairston, P. O'Dette, S.P. Tobin, F.T.J. Smith, B.L. Musicant, P. Mitra, and F.C. Case,SPIE Proc. 3379, 200 (1998).

    Article  CAS  Google Scholar 

  5. P. Mitra, F.C. Case, and M.B. Reine,J. Electron. Mater., 27, 510 (1998).

    Article  CAS  Google Scholar 

  6. P. Mitra, F.C. Case, M.B. Reine, T. Parodos, S.P. Tobin, and P.W. Norton,J. Electron. Mater., 28, 589 (1999).

    Article  CAS  Google Scholar 

  7. C.D. Maxey, M.U. Ahmed, C.L. Jones, R.A. Catchpole, P. Capper, N.T. Gordon, M. Houlton and T. Ashley (Paper presented at the 2000 U.S. Workshop on the Physics and Chemistry of II–VI Materials, Albuquerque, NM Oct. 30–Nov. 1, 2000).

  8. P. Capper, C.D. Maxey, P.A.C. Whiffin, and B.C. Easton,J. Cryst. Growth 96, 519 (1989).

    Article  CAS  Google Scholar 

  9. G. Cinader, A. Raizman, and A. Sher,J. Vac. Sci. Technol. B9, 1634 (1991).

    CAS  Google Scholar 

  10. M.J. Bevan, N.J. Doyle, and T.A. Temofonte,J. Appl. Phys. 71, 204 (1992).

    Article  CAS  Google Scholar 

  11. R. Triboulet, A. Tromson-Carli, D. Lorans, and T. Nguyen Duy,J. Electron. Mater., 22, 827 (1993).

    CAS  Google Scholar 

  12. J. Geiss, J.E. Hails, A. Graham, G. Blackmore, M.R. Houlton, J. Newey, M.L. Young, M.G. Astles, W. Bell, and D.J. Cole-Hamiliton,J. Electron. Mater. 24: 1149 (1995).

    Google Scholar 

  13. S.-H. Suh, J.-H. Song, and S.-W. Moon,J. Cryst. Growth 159, 1132 (1996).

    Article  CAS  Google Scholar 

  14. J.E. Hails, D.J. Cole-Hamilton, and J. Geiss,J. Electron. Mater. 27 624 (1998).

    Article  CAS  Google Scholar 

  15. T.H. Meyers, J.F. Schetzina, T.J. Magee, and R.D. Ormond,J. Vac. Sci. Technol. A3, 1598 (1983).

    Google Scholar 

  16. W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, and H.F. Schaake,J. Electron. Mater. 24, 505 (1995).

    CAS  Google Scholar 

  17. P. Mitra, Y.L. Tyan, T.R. Schimert, and F.C. Case,Appl. Phys. Lett. 65, 195 (1994).

    Article  CAS  Google Scholar 

  18. P. Mitra, F.C. Case, M.B. Reine, R. Starr, and M.H. Weiler,J. Cryst. Growth 170, 542 (1997).

    Article  CAS  Google Scholar 

  19. P. Mitra, Y.L. Tyan, F.C. Case, R. Starr, and M.B. Reine,J. Electron. Mater. 25, 1328 (1996).

    CAS  Google Scholar 

  20. I. Hahnert, and M. Schenk. J. Cryst. Growth 101, 251 (1990).

    Article  Google Scholar 

  21. P. Mitra, F.C. Case, S.L. Barnes, M.B. Reine, P. O'Dette, and S.P. Tobin,Mater. Res. Soc. Symp. Proc. 484, 233 (1998).

    CAS  Google Scholar 

  22. A.J. Brouns, T.R. Schimert, P. Mitra, F.C. Case, S.L. Barnes, and Y.L. Tyan,Semicond. Sci. Technol. 8, 928 (1993).

    Article  CAS  Google Scholar 

  23. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski, and E.E. Krueger,Semicond. Sci. Technol. 8, 788 (1993).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Lockheed Martin Missiles and Fire Control-Dallas, P.O. Box 650003, 75265-0003, Dallas, TX

    P. Mitra & F. C. Case

  2. Honeywell Electronic Materials, 15 128 E. Euclid Avenue, 99216, Spokane, WA

    H. L. Glass, V. M. Speziale & J. P. Flint

  3. BAE SYSTEMS, 2 Forbes Road, 02421-7306, Lexington, MA

    S. P. Tobin & P. W. Norton

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  1. P. Mitra
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Mitra, P., Case, F.C., Glass, H.L. et al. HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy. J. Electron. Mater. 30, 779–784 (2001). https://doi.org/10.1007/BF02665872

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