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A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenic

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Abstract

The growth of GaAs by chemical beam epitaxy using triethylgallium and trisdimethylaminoarsenic has been studied. Reflection high-energy electron diffraction (RHEED) measurements were used to investigate the growth behavior of GaAs over a wide temperature range of 300–550°C. Both group III- and group Vinduced RHEED intensity oscillations were observed, and actual V/III incorporation ratios on the substrate surface were established. Thick GaAs epitaxial layers (2–3 μm) were grown at different substrate temperatures and V/III ratios, and were characterized by the standard van der Pauw-Hall effect measurement and secondary ion mass spectroscopy analysis. The samples grown at substrate temperatures above 490°C showed n-type conduction, while those grown at substrate temperatures below 480°C showed p-type conduction. At a substrate temperature between 490 and 510°C and a V/III ratio of about 1.6, the unintentional doping concentration is n ∼2 × 1015 cm−3 with an electron mobility of 5700 cm2/V·s at 300K and 40000 cm2/V·s at 77K.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California at San Diego, 92093-0407, La Jolla, CA

    H. K. Dong, N. Y. Li & C. W. Tu

  2. AT&T Bell Laboratories, 18031-9359, Breinigsville, PA

    M. Geva

  3. Air Force Wright Laboratory, 45433-6543, Wright-Patterson AFB, OH

    W. C. Mitchel

Authors
  1. H. K. Dong
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  2. N. Y. Li
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  3. C. W. Tu
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  4. M. Geva
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  5. W. C. Mitchel
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Dong, H.K., Li, N.Y., Tu, C.W. et al. A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenic. J. Electron. Mater. 24, 69–74 (1995). https://doi.org/10.1007/BF02659623

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  • DOI: https://doi.org/10.1007/BF02659623

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