Abstract
The choice of a window material suitable for high power CO2 lasers emitting at 10.6 μm is discussed. Gallium arsenide was chosen and its preparation is discussed at length. The physical, electrical and optical properties of GaAs are also discussed with particular reference to the high-resistivity form which is necessary to reduce free-carrier absorption at 10.6 μm to an acceptable level. The method used to measure the optical absorption coefficient is a calorimetric one making use of a low power CO2 laser. The variation of the optical absorption coefficient with impurities, different dopants, resistivity, laser beam polarization and various growth parameters has been examined. It was found that GaAs could be routinely prepared with an absorption coefficient below 0.02 cm-1 at 10.6 μm, a minimum value of 0.005 cm-1 being the best observed. The prime cause of this absorption has not yet been established, but the need for further theoretical work is clear. The quality of the GaAs prepared makes it a prime candidate for a window material in high power CO2 lasers and systems.
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This work was partially supported by the Office of Naval Research, Physics Branch, under Contract N00014-70-C-0132.
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Thompson, A.G. Gallium arsenide for laser window applications. J. Electron. Mater. 2, 47–70 (1973). https://doi.org/10.1007/BF02658103
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DOI: https://doi.org/10.1007/BF02658103