Abstract
Annealing effects on contact metallurgy were examined in the Ag/Al-(100) InP system. Metal film configuration and annealing conditions were those that resulted in Schottky contacts with superior electrical characteristics. Metallurgical changes were observed with transmission electron microscopy combined with selected area diffraction (SAD) and x-ray diffraction. A1 was redistributed from the metal-semiconductor interface throughout the Ag overlayer upon annealing. Subsequent cooling resulted in the precipitation of Ag2Al. During annealing the metal film underwent surface energy driven recrystallization (SEDR) with the predominant orientation observed in large recrystallized grains being: Ag(111)‖InP(100) and, to within 9° of rotation, Ag(110)‖InP(001). It is proposed that the thin Al interlayer and formation of Ag2A1 early in the annealing cycle modifies the interaction between the metal film and InP substrate which results in contact metallurgy substantially different than that observed for either pure Ag or Al films on (100) InP.
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Dunn, J., Jen, H.R. & Stringfellow, G.B. Annealing effects in the Ag/Al-(100) InP system: Al redistribution and film recrystallization. J. Electron. Mater. 18, 445–451 (1989). https://doi.org/10.1007/BF02657993
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DOI: https://doi.org/10.1007/BF02657993