Abstract
CdTe(lll)B layers have been grown on misoriented Si(001). Twin formation inside CdTe(lll)B layer is very sensitive to the substrate tilt direction. When Si(001) is tilted toward [110] or [100], a fully twinned layer is obtained. When Si(001) is tilted toward a direction significantly away from [110], a twin-free layer is obtained. Microtwins inside the CdTe(111)B layers are overwhelmingly dominated by the lamellar twins. CdTe(111)B layers always start with heavily lamellar twinning. For twin-free layers, the lamellar twins are gradually suppressed and give way to twin-free CdTe(111)B layer. The major driving forces for suppressing the lamellar twinning are the preferential orientation of CdTe[11-2] along Si[1-10] and lattice relaxation. Such preferential orientation is found to exist for the CdTe(111)B layers grown on Si(001) tilted toward a direction between [110] and [100].
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Chen, Y.P., Faurie, J.P., Sivananthan, S. et al. Suppression of twin formation in CdTe(111)B epilayers grown by molecular beam epitaxy on misoriented Si(001). J. Electron. Mater. 24, 475–481 (1995). https://doi.org/10.1007/BF02657950
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DOI: https://doi.org/10.1007/BF02657950