Abstract
Damage produced in VPE GaAs1− x P x . alloys by fast neutron irradiation at room temperature was studied, in light emitting diodes, through the evolution of device carrier lifetime, photoluminescence, electroluminescence and transient capacitance spectroscopy characteristics. Neutron fluxes were in the 1013−1014 neutrons/cm2 range so as not to heavily damage the devices. Damage constants are 10−5 to 10−6 cm2/s for 0.3 ≤x ≤ 1. The carrier removal rate was ≈; 10 cm−1. Deep-level transient spectroscopy in n-type layers revealed that fast neutrons created a broad center atE c − 0.7 eV, and at a ≈;1 cm−1 generation rate. For thex ≥ 0.4 composition range studied, trap characteristics and introduction rates were rather independent ofx. From photocapacitance quenching measurements it is suggested that the neutron generated centers are EL2-related.
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References
Y. Tokuda, and A. Usami, IEEE Trans. Nucl. Sci.NS-28, 3564 (1981).
Y. Tokuda, and A. Usami, IEEE Trans. Nucl. Sci.NS-29, 1388 (1982).
A. Goltzene, B. Meyer, C. Schwab, Proc. 11 Int. Symposium on GaAs and Related Compounds, Biarritz, September, 1984.
G. Vincent, and D. Bois, Solid State Commun.27, 431 (1978).
G. Vincent, D. Bois, and A. Chantre, J. Appl. Phys.53, 3643 (1982).
G. M. Martin, E. Esteve, P. Langlade, and S. Makram-Ebeid, J. Appl. Phys.56, 2655 (1984).
A. S. Epstein, S. Share, P. Polimadei, and A. H. Herzog, Appl. Phys. Lett.23, 472 (1973).
V. Alcober, E. Calleja, F. García, and E. Muñoz, 5th General Conference of the Condense Matter Division of the European Physical Society, Berlin, March (1985).
E. Muñoz, F. García, B. Jiménez, E. Calleja, A. Gómez, and V. Alcober, Appl. Phys. Lett.47, 798 (1985).
C. E. Barnes, T. E. Zipperian, and L. R. Dawson, J. Electron. Mater.14, 95 (1985).
J. Kuno, IEEE Trans. Elect. DevicesED-11, 8 (1964).
R. H. Hum, and A. L. Barry, IEEE Trans, on Nucl. Sci.NS-22, 2482 (1975).
C. E. Barnes, J. Appl. Phys.48, 1921 (1977).
G. Heine, and M. Morgenstern, Phys. Stat. Sol. (a)18, 139 (1973).
S. Metz, and W. Fritz, Int. Phys. Conf. Serv.33, 66 (1977).
E. Calleja, E. Muñoz, and F. García, Appl. Phys. Lett.42, 528 (1983).
E. Calleja, E. Muñoz, B. Jiménez, A. Gómez, F. García, and F. Kellert, J. Appl. Phys.57, 5295 (1985).
G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys.50, 5484 (1979).
P. Omling, L. Samuelson, and H. G. Grimmeiss, J. Appl. Phys.54, 5117 (1983).
G. Ferenczi, Proc. Int. School of Development in Semiconductors Physics, p. 116 (1984), Springer-Verlag.
E. Calleja, A. I. Gómez, and E. Muñoz, Solid-State Electron. (to be published).
B. R. Gossick, J. Appl. Phys.30, 1214 (1959).
L. S. Smirnov, “A Survey of Semiconductor Radiation Techniques,” Mir Publishers, Moscow, 1983.
Y. Tokuda, and A. Usami, J. Appl. Phys.57, 2325 (1985).
G. H. Kinchin, and R. S. Pease, Repts. Prog, in Phys.18, 1 (1955).
P. Omling, L. Samuelson, and H. G. Grimmeiss, Phys. Rev.B 29, 4534 (1984).
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Garcia, F., Muñoz, E., Calleja, E. et al. Damage constant and deep-level transient spectroscopy in neutron irradiated GaAsP alloys. J. Electron. Mater. 15, 133–139 (1986). https://doi.org/10.1007/BF02655326
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DOI: https://doi.org/10.1007/BF02655326