Abstract
We consider a simple model for the electron Boltzmann equation in a semiconductor and show that specific boundary value problems can be explicitly solved. Cases of both homogeneous and inhomogeneous electric fields are considered.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. L. Grubin, K. Hess, G. J. Iafrate, and D. K. Ferry, eds.,Physics of Semiconductor Devices (Plenum Press, New York, 1984).
S. M. Sze,Physics of Semiconductor Devices, (Wiley, New York, 1981).
C. Cercignani,The Boltzmann Equation and Its Application (Springer, New York, 1988).
C. Cercignani,Mathematical Methods in Kinetic Theory, 2nd rev. ed. (Plenum Press, New York, 1990).
S. A. Trugman and A. J. Taylor, Analytic solution of the Boltzmann equation with applications to electron transport in inhomogeneous semiconductors,Phys. Rev. B 33:5575–5584 (1986).
H. U. Baranger and J. W. Wilkins, Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects,Phys. Rev. B 30:7349–7351 (1984).
C. Cercignani, Scattering kernels for gas-surface interactions,Transport Theory Stat. Phys. 1:101 (1971).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Cercignani, C. An explicitly solvable kinetic model for semiconductors. J Stat Phys 77, 1039–1048 (1994). https://doi.org/10.1007/BF02183150
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02183150