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Switching mechanism in polarization-bistable semiconductor lasers

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Abstract

The steady-state and transient properties of polarization-bistable semiconductor lasers are investigated, both experimentally and theoretically. An analysis based on coupled rate equations for a two-mode system with unequal gain/current characteristics is presented. The simple rate-equation model explains the general features of the observed bistable-switching behaviour. The condition for the existence of polarization bistability is determined using laser parameters.

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Author notes

  1. Y. C. Chen

    Present address: Optical Group Research, Perkin-Elmer Corporation, 100 Wooster Heights Road, 06810, Danbury, Connecticut

  2. J. M. Liu

    Present address: Department of Electrical Engineering, University of California, 90024, Los Angeles, California, USA

Authors and Affiliations

  1. GTE Laboratories, 40 Sylvan Road, 02254, Waltham, Massachusetts, USA

    Y. C. Chen & J. M. Liu

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  1. Y. C. Chen
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  2. J. M. Liu
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Additional information

The analysis and part of the experiment were performed at Perkin-Elmer Corporation.

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Chen, Y.C., Liu, J.M. Switching mechanism in polarization-bistable semiconductor lasers. Opt Quant Electron 19 (Suppl 1), S93–S102 (1987). https://doi.org/10.1007/BF02034356

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