Abstract
Thin and pure Tl-films and In-films with different impurities (Ag, Te, Ge, Sb) are condensed onto a cooled substrate at 4 K. Measurements of the energy gap by means of the tunnel effect and the transition temperature of the weak-coupling superconductor thallium are carried out as a function of the degree of disorder of the films. The ratioα=2Δ 0/kT c increases proportional to the reciprocal mean free path from 3.5 for the annealed film up to 3.8 for the highly disordered film. For In-films condensed by quenching with impurity additions, one finds a linear relation between energy gap and transition temperature. In-films with Sb-additive are obtained in an amorphous phase with a ratioα=2Δ 0/kT c of 4.4. The amorphous state of the In/Sb-films is confirmed by measurements of the electric conductivity and the Hall-effect.
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Parts of the paper were presented on the meeting organized by the Deutsche Physikalische Gesellschaft in spring 1974 in Freudenstadt (Verhandl. DPG (VI) 9, 815 (1974)).
The authors would like to thank Dr. Wühl and Prof. Sander for many stimulating discussions.
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Comberg, A., Ewert, S. & Bergmann, G. Energy gap and transition temperature of highly disordered and amorphous thallium- and indium-films. Z. Physik 271, 317–321 (1974). https://doi.org/10.1007/BF01677942
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DOI: https://doi.org/10.1007/BF01677942