Abstract
This paper presents the results of investigations into the properties of p- n junctions obtained by the thermal diffusion of phosphorus into p- type silicon. Data are given on the load and spectral characteristics of silicon photocells with p- n junctions, as well as on the operation of these photocells at high intensities of illumination.
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Additional information
The authors express their thanks to Corresponding Member of the Academy B. M. Vul for constant attention and advice, to V. K. Subashiev for a number of valuable remarks, and also to laboratory associates V. G. Kolotilova, B. Ia. Iurkov, B. D. Kopylovskii, Iu. A. Kolotov, and V. M. Vasin, who in many respects have assisted in the carrying out of the work. Engineer R. Sh. Akchurin and laboratory technicians L. V. Belova, E. M. Divil'kovskaia, and F. M. Sidorov took part in the work.
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Vavilov, V.S., Galkin, G.N. & Malovetskaia, V.M. Silicon photocells as solar-radiation converters. The Soviet Journal of Atomic Energy 4, 751–755 (1958). https://doi.org/10.1007/BF01515402
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DOI: https://doi.org/10.1007/BF01515402