Abstract
High quality silicon junction detectors have been made by implantation of boron and phosphorus ions into silicon wafers. Resolutions of 20 keV for Po α-particles were obtained.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
We wish to express our thanks to Prof. W.Gentner for his interest in this work.
The ion source and the analysing magnet were built by Mr. E.Heinicke and H.Baumann. We gratefully acknowledge their cooperation, which made this work possible.
Rights and permissions
About this article
Cite this article
Kalbitzer, S., Bader, R., Herzer, H. et al. The fabrication of high quality silicon junction detectors by low energy ion implantation. Z. Physik 203, 117–118 (1967). https://doi.org/10.1007/BF01326065
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01326065