Abstract
The theory of carrier heating in nondegenerate unpolar semiconductors under the influence of both ion scattering and lattice scattering is developed. Scattering by acoustical and optical phonons is considered. The velocity distribution is chosen as Maxwellian using an electron temperature slightly above the lattice temperature. Forn-type germanium the influence of ion scattering on electron heating comes out to be about 4 times stronger than that on zero-field mobility in the case of small ion densities. A factor of 5 is obtained instead, if optical phonons are neglected using a theory bySodha. A comparison with experimental data has the effect that apparently ion scattering is unsufficient to explain the variations found between different samples.
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Herrn Professor Dr. O.Haxel danke ich für das der Arbeit entgegengebrachte Interesse, den Herren Professor Dr. J.Bardeen, Dr. T. N.Morgan und Dr. B.Mühlschlegel für Diskussionen und Herrn Dr. G.Kramer und Herrn H. D.Zeh für numerische Rechnungen. Der Reaktor GmbH., Karlsruhe, danke ich für die Möglichkeit zur Benutzung ihrer elektronischen Rechenmaschine ZUSE. Das Bundesministerium für Atomkernenergie und Wasserwirtschaft hat die Arbeit durch ein Stipendium unterstützt.
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Seeger, K. Ionenstreuung warmer Elektronen in nichtentarteten unpolaren Halbleitern. Z. Physik 156, 582–591 (1959). https://doi.org/10.1007/BF01322034
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DOI: https://doi.org/10.1007/BF01322034