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Correlation betweenJ c and screw dislocation density in sputtered YBa2Cu3O7-δ films

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Zeitschrift für Physik B Condensed Matter

Abstract

Electric transport properties of sputtered YBa2Cu3O7−δ films were studied as a function of screw dislocation density, ranging from 5·107 cm−2 to 1.3·109 cm−2 as determined at the film surface. A correlation was found between the number of screw dislocations and the critical current density (J c ). Films with higher screw dislocation densities have higher critical current densities and a slower drop ofJ c as a function of applied magnetic fieldH.

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Author notes

  1. D. Anselmetti

    Present address: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland

Authors and Affiliations

  1. IBM Research Division, Zurich Research Laboratory, CH-8803, Rüschlikon, Switzerland

    J. Mannhart, D. Anselmetti, J. G. Bednorz, A. Catana, Ch. Gerber, K. A. Müller & D. G. Schlom

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  1. J. Mannhart
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  2. D. Anselmetti
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  3. J. G. Bednorz
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  4. A. Catana
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  7. D. G. Schlom
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Mannhart, J., Anselmetti, D., Bednorz, J.G. et al. Correlation betweenJ c and screw dislocation density in sputtered YBa2Cu3O7-δ films. Z. Physik B - Condensed Matter 86, 177–181 (1992). https://doi.org/10.1007/BF01313823

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  • DOI: https://doi.org/10.1007/BF01313823

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