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Production of silicon nitride by gas nitridation of ultra-fine silicon powder

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Abstract

Ultra-fine silicon powder of diameter 20 to 50 nm was gas nitrided at 1373 K. Contamination with air increased the nitriding temperature, which was lower than that found in previous work for larger particle-size powders.

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Authors and Affiliations

  1. Department of Materials Science, School of Mechanical Engineering, Technological University of Nagoaka, 940-21, Nagaoka, Niigata, Japan

    K. Ishizaki, S. Yumoto & K. Tanaka

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  1. K. Ishizaki
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  2. S. Yumoto
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  3. K. Tanaka
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Ishizaki, K., Yumoto, S. & Tanaka, K. Production of silicon nitride by gas nitridation of ultra-fine silicon powder. J Mater Sci 23, 1813–1816 (1988). https://doi.org/10.1007/BF01115725

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  • DOI: https://doi.org/10.1007/BF01115725

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