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Quantum cyclotron resonance in silicon

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Abstract

Quantum effects in the cyclotron absorption of thermally excited holes in the valence bands of Si are demonstrated for the first time. They become evident in the dependence of the cyclotron absorption spectra on uniaxial stress. The spectra were taken with fixed infrared excitation from an HCN laser (ħω=3.68 meV) and pulsed magnetic fields up to 35 Teslas. The uniaxial stress parallel to the magnetic field in <100> and <111> direction reached 10 kbars, the crystal temperature was set between 30 and 60 K.

The interpretation of the measured spectra is possible using the stress-dependence of Landau level dispersion, which is calculated by numerical diagonalization of a Hamiltonian for the sixfold degenerate valence band maximum (split by spin-orbit coupling into J=3/2 and J=1/2 states). The small spin-orbit splitting in Si of 44 meV is responsible for an efficient coupling between light-hole and split-off-band and results, even in the high-stress-limit, in a remarkable non-parabolicity.

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Authors and Affiliations

  1. Service des Champs Magnétiques Intenses, Laboratoire de Physique des Solides Associé au CNRS INSA, Avenue de Rangueil, F-31077, Toulouse Cedex

    J. Leotin, A. Poirier, G. Carrere & S. Askenazy

  2. Institut für Theoretische Physik, Universität Regensburg, Universitätsstr. 31, D-8400, Regensburg

    U. Rössler & M. Braun

Authors
  1. J. Leotin
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  2. A. Poirier
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  3. G. Carrere
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  4. S. Askenazy
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  5. U. Rössler
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  6. M. Braun
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Leotin, J., Poirier, A., Carrere, G. et al. Quantum cyclotron resonance in silicon. Int J Infrared Milli Waves 4, 575–589 (1983). https://doi.org/10.1007/BF01009396

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  • DOI: https://doi.org/10.1007/BF01009396

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