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Influence of electron-hole and donor-acceptor interactions on the distribution coefficients of impurities in multiply doped semiconductors

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Abstract

Expressions are obtained for the dependences of the distribution coefficients of impurities on the carrier concentration and liquid phase composition in multiply doped semiconductors with electron-hole and donor-acceptor interactions.

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Authors and Affiliations

  1. Scientific-Research Institute of Applied Physics at the A. A. Zhdanov State University, Irkutsk

    V. N. Morozov & V. G. Chernov

Authors
  1. V. N. Morozov
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  2. V. G. Chernov
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 47–50, June, 1980.

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Morozov, V.N., Chernov, V.G. Influence of electron-hole and donor-acceptor interactions on the distribution coefficients of impurities in multiply doped semiconductors. Soviet Physics Journal 23, 501–504 (1980). https://doi.org/10.1007/BF00892316

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  • DOI: https://doi.org/10.1007/BF00892316

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