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Electron-electron scattering in vanadium

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Abstract

Measurements have been made over a range from liquid helium to room temperature of the electrical resistivity of a single crystal of vanadium with a residual resistance ratio (RRR) of 1974, the highest ever reported. The data were analyzed in terms of electron-impurity scattering, electron-electron scattering, and electron-phonon interband and intraband scattering. We have obtained aT 2 electron-electron scattering coefficient of (1.6±0.2)×10−11 Ω cm/K2, in agreement with that obtained earlier in the same laboratory on a crystal with lower purity. Therefore, we conclude that electron-electron scattering does contribute measurably to the electrical resistivity of vanadium at low temperature.

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Author notes

  1. T. Y. Hsiang

    Present address: Electrical Engineering Department, University of Rochester, Rochester, New York

Authors and Affiliations

  1. Department of Physics, Illinois Institute of Technology, Chicago, Illinois

    G. J. Gautron, J. E. Zablocki, T. Y. Hsiang & H. Weinstock

  2. Department of Energy, Ames Laboratory, Ames, Iowa

    F. A. Schmidt

Authors
  1. G. J. Gautron
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  2. J. E. Zablocki
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  3. T. Y. Hsiang
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  4. H. Weinstock
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  5. F. A. Schmidt
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Supported in part by the U.S. Department of Energy.

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Gautron, G.J., Zablocki, J.E., Hsiang, T.Y. et al. Electron-electron scattering in vanadium. J Low Temp Phys 49, 185–191 (1982). https://doi.org/10.1007/BF00681770

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  • DOI: https://doi.org/10.1007/BF00681770

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