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Magnetoresistance effect of bismuth in a quantizing field

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Abstract

The magnetoresistance effect in bismuth has been studied at the very low temperature limit when the lattice scattering is dominant in solids. Results show that the magnetoresistance oscillates with the dc magnetic field and displays sharp, cusplike discontinuities due to the nonlinear and singular properties of the energy band structure of bismuth for the modified nonellipsoidal, nonparabolic (MNENP) model.

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Authors and Affiliations

  1. Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

    Chhi-Chong Wu

  2. Department of Applied Mathematics, National Chiao Tung University, Hsinchu, Taiwan

    Chau-Jy Lin

Authors
  1. Chhi-Chong Wu
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  2. Chau-Jy Lin
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Wu, CC., Lin, CJ. Magnetoresistance effect of bismuth in a quantizing field. J Low Temp Phys 59, 83–87 (1985). https://doi.org/10.1007/BF00681505

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  • DOI: https://doi.org/10.1007/BF00681505

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