Literature cited
E. O. Goebel, G. Veith, I. Kuhl, et al., Appl. Phys. Lett.,42, No. 1, 25–27 (1983).
A. Perger, N. Tichawa, and A. I. Schmidt, Opt. Quantum Electron.,16, No. 1, 52–53 (1984).
Yu. V. Zenkov, P. K. Kashkarov, M. S. Dzhidzhoev et al., Fiz. Tekh. Poluprovodn.,19, No. 7, 1287–1289 (1985).
Sh. Nojima, J. Appl. Phys.,52, No. 12, 7445–7447 (1981).
A. A. Ptashchenko, V. P. Sushkov, V. I. Irkha, et al., Elektron. Tekh., Ser. 2, No. 8, 37–47 (1978).
A. A. Ptashchenko, Zh. Prikl. Spektrosk.,33, No. 5, 781–803 (1980).
A. A. Ptashchenko, L. F. Litovchenko, V. A. Teplyakov, and V. M. Baranov, Ukr. Fiz. Zh.,23, No. 1, 100–108 (1978).
A. Ambrozyak, Construction and Technology of Semiconductor Photoelectric Devices [in Russian], Moscow (1970).
A. G. Dmitriev and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn.,5, No. 8, 1494–1502 (1971).
A. A. Ptashchenko and N. V. Moroz, Zh. Prikl. Spektrosk.,45, No. 3, 474–478 (1986).
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 50, No. 6, pp. 897–901, June, 1989.
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Ptashchenko, A.A., Tsap, B.V. Degradation of emitting p-n structures based on GaAsP and GaAlAs under the action of laser radiation. J Appl Spectrosc 50, 557–560 (1989). https://doi.org/10.1007/BF00659995
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DOI: https://doi.org/10.1007/BF00659995