Abstract
Experimental results are presented concerning low-temperature (2 to 200°K) thermal conductivity measurements of silicon irradiated with fast neutrons between 1016 and 6×1017 n/cm2, and low-temperature annealing studies. The effects are intrinsic and are mainly due to the heterogeneous defect structure. A simple model of this defect structure explains the phonon scattering that determines the thermal conduction below 20°K. The relaxation-time expression used takes into account the volume distribution of the disordered regions and their “opacity” as it is seen by phonons. Low-temperature annealing does not affect the volume distribution, but causes the “opacity” to decrease.
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Seyfert, P. Low-temperature thermal conductivity studies on silicon irradiated with fast neutrons at 80°K. J Low Temp Phys 2, 555–571 (1970). https://doi.org/10.1007/BF00628274
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DOI: https://doi.org/10.1007/BF00628274