Abstract
Investigations are reported into the effect of low-pressure oxygen exposure and thermal annealing on the carrier transport properties of native and 350 eV Ar+ bombarded PbTe films. The electrical measurements were madein situ on MBD-grown PbTe films without breaking vacuum. On native surfaces, oxidation was initially sustained by diffusion of a donor species from the film bulk to the surface, where reaction with oxygen occured. This diffusion process was apparently inhibited on ion irradiated films and direct doping of the film surface effected a gradual reduction in the ion-induced electron accumulation resident at the film surface. The native properties and behavioural characteristics of the films could be recovered by thermal annealing of the ion-irradiated and/or oxidized films at 300–350 °C.
Similar content being viewed by others
References
R.F.C. Farrow: InMolecular beam epitaxy and heterostructures, ed. by L.L. Chang, K. Ploog (Martinus Nijhoff, The Netherlands 1985) p. 227
D.L. Partin, R.F. Majkowski, D.E. Swets: Proc. 3rd Intern. Conf. on MBE (San Francisco, August 1984)
P. Norton, G. Knoll, K.-H. Bachem: Proc. 3rd Intern. Conf. on MBE (San Francisco, August 1984)
R.A.A. Kubiak, E.H.C. Parker, R.M. King, K. Wittmaack: J. Vac. Sci. Technol.A1, 34 (1983)
Y. Margoninski, D. Eger: Surf. Sci.80, 579 (1979)
M.F. Millea, A.H. Silver, L.D. Flesner: Thin Solid Films56, 253 (1979)
A.A. Rezazadeh, D.W. Palmer: InDefects and Radiation Defects in Semiconductors 1980, ed. by R.R. Hasiguti (Inst. of Phys., Berkshire 1981) p. 317
Z.L. Liau, J.W. Mayer, W.L. Brown, J.M. Poate: J. Appl. Phys.49, 5295 (1979)
D. Williams, E.H.C. Parker: J. Phys. E10, 1176 (1977)
E.H.C. Parker, D. Williams: Thin Solid Films35, 373 (1976)
E.H.C. Parker, D. Williams: Solid State Electron.20, 567 (1977)
S.R.L. McGlashan, R.M. King, E.H.C. Parker: J. Vac. Sci. Technol.16, 1174 (1979)
L.J. Van der Pauw: Philips Res. Rep.13, 1 (1958)
R.F. Egerton: Philos. Mag.20, 547 (1969)
1 Langmuir corresponds to exposure at an oxygen pressure of 1×10−6Torr for 1 s; 1 Langmuir=1×10−6Torr s
S. Crank:The Mathematics of Diffusion (Clarendon, Oxford 1956)
W.J.O. Boyle: CNAA Thesis (1984)
J.N. Zemel: InSurface Physics of Phosphors and Semiconductors, ed. by C.E. Scott, C.E. Reed (Academic, London 1975) p. 536
R.F. Egerton, C. Juhasz: Thin Solid Films4, 239 (1969)
R.F. Brebrick, A.J. Strauss: J. Chem. Phys.40, 3230 (1964)
D.L. Rode:Semiconductors and Semimetals 10, 1 (Academic, New York 1975)
R. Dalvern: Infrared Phys.9, 141 (1969)
Y. Koni, K. Shohno: Jpn. J. Appl. Phys.2, 6 (1963)
A. Many, Y. Goldstein, N.B. Grover:Semiconductor Surfaces (North-Holland, Amsterdam 1967)
T.S. Sun, N.E. Byer, J.M. Chen: J. Vac. Sci. Technol.15, 585 (1978)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kubiak, R.A.A., King, R.M. & Parker, E.H.C. Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition. Appl. Phys. A 37, 145–151 (1985). https://doi.org/10.1007/BF00617499
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00617499