Abstract
The nature of dark spots observed in cathodoluminescence micrographs of gallium phosphide epitaxial layers has been examined using the transmission electron microscope and etching studies. Each dark spot is shown to be located at the intersection of a dislocation with the layer surface. Moreover screw, edge and mixed dislocations all give rise to spots of similar size and intensity. It is suggested that enhanced non-radiative recombination which gives rise to the dark spots is due to the core structure, rather than a concentration of dopant atoms, method of layer growth, etc., and that different core structures are equally effective.
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Titchmarsh, J.M., Booker, G.R., Harding, W. et al. Carrier recombination at dislocations in epitaxial gallium phosphide layers. J Mater Sci 12, 341–346 (1977). https://doi.org/10.1007/BF00566276
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DOI: https://doi.org/10.1007/BF00566276