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Kinetics of F 2 -center absorption relaxation during exposure of an LiF crystal to pulsed radiation

  • Physics Of Semiconductors And Dielectrics
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Abstract

The pulsed absorption and luminescence spectrometry techniques with time resolution are used to study the processes of creation and postradiative destruction of F 2 -centers in the time interval 10−8-105 sec following exposure of LiF crystals with different sets of preliminarily introduced color centers to a radiation pulse in the temperature interval 80–400 K. The accumulated data on kinetics of the relaxation of F +2− , F2−, and F 2− absorption and radioluminescence bands of the crystal are used to provide a phenomenological description of the charge evolution of an F2-center leading to the formation of F +2− and F 2− centers due to thermally activated variation of the spin of an F2-center under the action of radiation. A mathematical description is provided for the kinetics of relaxation of absorption of F 2 -centers initiated by a radiation pulse, and the energy and kinetic parameters are determined for the processes of formation and destruction of F 2 -centers.

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Additional information

Civil Engineering Institute, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 99–111, June, 1992.

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Lisitsyna, L.A., Chinkov, E.P. & Reiterov, V.M. Kinetics of F 2 -center absorption relaxation during exposure of an LiF crystal to pulsed radiation. Russ Phys J 35, 572–581 (1992). https://doi.org/10.1007/BF00559186

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  • DOI: https://doi.org/10.1007/BF00559186

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