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Intraband photoconductivity in variable-gap semiconductors produced by photon drag of charge carriers

  • Physics Of Semiconductors And Dielectrics
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Russian Physics Journal Aims and scope

Abstract

The special features resulting from the photon drag of intraband photoconductivity carriers in variable-gap semiconductors with intrinsic type conductivity and a forbidden-gap width which varies linearly with distance are considered theoretically. An analysis is made of the dependence of the photoconductivity on the gradient of the forbidden-gap width for different surface recombination rates and sample thicknesses. It is shown that a spatial inhomogeneity of the band structure in semiconductors enables their photoconductivity to be substantially increased, especially in the case of thick samples.

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References

  1. O. V. Konstantinov and G. V. Tsarenkov, Fiz. Tekh. Poluprovodn.,10, 720 (1975).

    Google Scholar 

  2. V. G. Savitskii and B. S. Sokolovskii, Fiz. Tekh. Poluprovodn.,13, 1451 (1979).

    Google Scholar 

  3. V. A. Kudinov, G. P. Peka, and A. N. Smolyar, Ukr. Fiz. Zh.,34(5), 742 (1989).

    Google Scholar 

  4. T. S. Moss, Phys. Status Solidi A,8(1), 223 (1971).

    Google Scholar 

  5. V. A. Grinberg, Fiz. Tekh. Poluprovodn.,7, 2351 (1973).

    Google Scholar 

  6. H. Kromer, RCA Rev.,18(3), 332 (1957).

    Google Scholar 

  7. É. I. Rashba, Z. S. Gribnikov, and V. Ya. Kravchenko, Usp. Fiz. Nauk,119, 3 (1976).

    Google Scholar 

  8. G. P. Peka, V. F. Kovalenko, and A. N. Smolyar, Variable-Gap Semiconductors [in Russian], Vyshcha Shkola, Kiev (1989).

    Google Scholar 

  9. V. G. Savitskii and B. S. Sokolovskii, Photoelectric Phenomena in Semiconductors [in Russian], Abstracts of Papers Presented at All-Union Conf., Tashkent (1989), pp. 279–280.

  10. V. G. Savitskii and B. S. Sokolovskii, Ukr. Fiz. Zh.,25(11), 1919 (1980).

    Google Scholar 

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Authors
  1. V. G. Savitskii
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  2. B. S. Sokolovskii
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Additional information

Institute of Applied Physics at the Ivan Franko State University, L'vov. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 48–52, September, 1993.

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Savitskii, V.G., Sokolovskii, B.S. Intraband photoconductivity in variable-gap semiconductors produced by photon drag of charge carriers. Russ Phys J 36, 852–855 (1993). https://doi.org/10.1007/BF00558995

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  • DOI: https://doi.org/10.1007/BF00558995

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