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The influence of interstitial impurity atoms on the recovery behaviour of cold-worked vanadium

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Abstract

Vanadium containing oxygen and nitrogen shows, after deformation at room temperature by rolling, two distinct recovery stages at annealing temperatures of about 450 and 550° K. Measurements of electrical resistivity and of low frequency damping were made. By variation of the gas content of the samples, it was established that the stage situated at 450° K is caused by the migration of oxygen atoms to dislocations, whereas at 550° K nitrogen atoms migrate to dislocations. Two small steps occurring at 340 and 400° K can be attributed to ordering of oxygen and nitrogen atoms in the dislocation stress fields.

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Authors and Affiliations

  1. Institut für Metallphysik und Reinstmetalle, Deutsche Akademie der Wissenschaften zu Berlin, Dresden, DDR

    A. Köthe & F. Schlät

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  1. A. Köthe
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  2. F. Schlät
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Köthe, A., Schlät, F. The influence of interstitial impurity atoms on the recovery behaviour of cold-worked vanadium. J Mater Sci 2, 201–205 (1967). https://doi.org/10.1007/BF00555374

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