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Ion beam induced effects in thin-film analysis

Ionenstrahlinduzierte Effekte bei der Dünnschichtanalytik

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Zusammenfassung

Quantitative Dünnschicht-oder Tiefenprofilanalysen werden häufig durch Störeffekte erschwert oder verhindert, die durch den zum Probenabtrag benutzten Ionenbeschuß induziert werden. Von diesen Effekten werden die beschußinduzierte Oberflächen-Mikrotopographie und die durch den Ionenbeschuß verursachten Stöchiometrieän-derungen an der Probenoberfläche anhand neuer theoretischer und experimenteller Ergebnisse diskutiert. Weiter wird ein Verfahren zur Erzeugung extrem ebener Beschußkrater bei niedrigen Ionenbeschußenergien besprochen.

Summary

Quantitative thin film and in-depth analysis is often complicated or even prevented by interfering effects which are induced by the ion bombardment used for sputter removal of the sample. From these effects, sputter induced surface microtopography and bombardment induced stoichiometry changes are discussed on the basis of recent experimental and theoretical results. A method for establishing extremely plane bombarding craters at low bombarding energies is mentioned.

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Authors and Affiliations

  1. Fachbereich Physik, Universität Kaiserslautern, Erwin-Schrödinger-Straße, D-6750, Kaiserslautern, Federal Republic of Germany

    H. Oechsner

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  1. H. Oechsner
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Oechsner, H. Ion beam induced effects in thin-film analysis. Z. Anal. Chem. 314, 211–214 (1983). https://doi.org/10.1007/BF00516800

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  • DOI: https://doi.org/10.1007/BF00516800

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