Summary
A method is described for the determination of zinc in gallium arsenide by ETAAS with platform atomization and matrix modification. The sample is decomposed with nitric and hydrochloric acids, ortho-phosphoric acid is added as a matrix modifier and the diluted solution is injected into the furnace. The optical correction of the nonspecific absorbance is readily achieved by means of a conventional deuterium lamp. Platform atomization improves the peak repeatability by a factor often in comparison with wall atomization. For a 40 mg sample, with reduced argon flow rate in the atomization step, the detection limit is 0.08 μg Zn g−1 (4×1015 atoms cm−3). Results obtained by analysing Zn-doped GaAs samples are presented. The relative standard deviation of the overall procedure is 4–8%.
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Taddia, M., Filippini, O. Determination of zinc in gallium arsenide by electrothermal atomic absorption spectrometry with the L'vov platform and matrix modification. Z. Anal. Chem. 330, 506–509 (1988). https://doi.org/10.1007/BF00490758
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DOI: https://doi.org/10.1007/BF00490758