Abstract
The present study gives support for the use of Pd-MOS sensors for the quantification of H2 in studies of biogas production. Furthermore, the study indicates a possibility of simultaneous H2S quantification by use of the Pd-MOS device. A model is also presented which includes the other major gas components in the studied process. Given suitable parameter adjustments, all the major gas components are accounted for, yielding a sum within ±3% from the ideal.
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Couput, J. P.; Cornut, C.; Chambu, C.; Chauvet, F.: A reversible hydrogen sulfide sensitive Pd-gate MOS transistor. In: Seiyama, T.; Fueki, K.; Shirokawa, J.; Suzuki, S. (Eds.): Proc. Int. Meet. Chem. Sens., pp. 468–472. New York: Elsevier 1983
Hörnsten, E. G.; Lundström, I.; Elwing, H.: Some biometrical applications of molecular hydrogen and ammonia determinations by the use of metal-oxide-semiconductor devices. In: Wise, D. L. (Ed.): Bioinstrumentation: research, developments and applications, pp. 47–91. Boston: Butterworths 1990
Lundström, I.; Svensson, C.: Gas-sensitive metal gate semiconductor devices. In: Janata, J.; Huber, R. J. (Eds.): Solid state chemical sensors, pp. 2–63. London: Academic Press 1985
Shivaraman, M. S.: Detection of H2S with Pd-gate MOS fieldeffect transistors. J. Appl. Phys. 47 (1976) 3592–3
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Hörnsten, E.G., Lundström, I., Nordberg, Å. et al. The use of palladium metal oxide semiconductor structures in quantitative studies of H2 and H2S in processes related to biogas production. Bioprocess Engineering 6, 235–240 (1991). https://doi.org/10.1007/BF00369717
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DOI: https://doi.org/10.1007/BF00369717