Skip to main content
Log in

The reaction between ruthenium dioxide and aluminium nitride in resistor pastes

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

Thermodynamic considerations predict that RuO2 used in resistor pastes for AIN as conductive phase, can be reduced by AIN. In air RuO2 reacts with AIN only to a very small extent. In the presence of a “non-reducible” glass the reaction between RuO2 and AIN is demonstrated by thermoanalytical, mass spectroscopical and XRD methods. The described reaction could be a reason for bubbles in resistor layers on AIN. A crystallizing glass impedes the complete reaction.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. W. Werdecker and F. Aldinger, IEEE Trans. Components Hybrids Manufact. Technol. CHMT-7 (1984) 399.

    Article  CAS  Google Scholar 

  2. Y. Kurokawa, K. Utsumi, H. Takamizawa, T. Kamata and S. Noguchi, IEEE trans. Components Hybrids Manufact. Technol. CHMT-7 (1985) p. 247.

    Article  Google Scholar 

  3. N. Kuramoto, H. Taniguchi and I. Aso, IEEE Trans. Components Hybrids Manufact. Technol. CHMT-9 (1986) 386.

    Article  CAS  Google Scholar 

  4. N. Iwase, K. Anzai and K. Shinozaki, Solid State Technol. 29(10) (1986) 135.

    CAS  Google Scholar 

  5. R. C. Enck, R. D. Harris and J. L. Fields, in Proceedings of the Technology Program, Nepconeast '90, Cahners Exposition Group des Plaines, II, USA (1990) p. 523.

    Google Scholar 

  6. H.-G. Burckhadt and H. Vavra, in Proceedings of the 7th European ISHM Conference, Hamburg, May 1989, p. 24.

  7. T. Kubota, J. Ishigame, S. Chiba and S. Sekihara, in Proceedings of the 5th International Microelectronics Conference, Tokyo, May 1988, edited by ISHM Japan Chapter, p. 137.

  8. D. Bonfert and A. Drost, Verbindungstechnik in der Elektronik Vol. 2(1) (1990) p. 8.

    Google Scholar 

  9. J. Ishigame, T. Kubota, S. Sekihara and K. Fujimura, in ISHM 88 Proceedings of International Symposium on Microelectronics, Seattle, Wa, 1988, edited by the Technical Program Committee and the ISHM staff, p. 349.

  10. E. G. Wilkins, D. M. Mattox and M. R. Riedmeyer, in 1991 Proceedings of International Symposium on Microelectronics, Orlando, Fl, 1991, edited by Technical Program Committee and the ISHM staff, p. 533.

  11. European Patent Application 0306271, August (1988).

  12. D. Chatterji and R. W. Vest, J. Amer. Ceram. Soc. 54 (1971) 73.

    Article  CAS  Google Scholar 

  13. M. G. Norton and B. C. H. Steele, in Proceedings of the Advanced Electronic Packaging Materials Symposium, 1990, p. 283.

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kretzschmar, C., Otschik, P., Jaenicke-Rößler, K. et al. The reaction between ruthenium dioxide and aluminium nitride in resistor pastes. JOURNAL OF MATERIAL SCIENCE 28, 5713–5716 (1993). https://doi.org/10.1007/BF00365170

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00365170

Keywords

Navigation