Abstract
Thermodynamic considerations predict that RuO2 used in resistor pastes for AIN as conductive phase, can be reduced by AIN. In air RuO2 reacts with AIN only to a very small extent. In the presence of a “non-reducible” glass the reaction between RuO2 and AIN is demonstrated by thermoanalytical, mass spectroscopical and XRD methods. The described reaction could be a reason for bubbles in resistor layers on AIN. A crystallizing glass impedes the complete reaction.
Similar content being viewed by others
References
W. Werdecker and F. Aldinger, IEEE Trans. Components Hybrids Manufact. Technol. CHMT-7 (1984) 399.
Y. Kurokawa, K. Utsumi, H. Takamizawa, T. Kamata and S. Noguchi, IEEE trans. Components Hybrids Manufact. Technol. CHMT-7 (1985) p. 247.
N. Kuramoto, H. Taniguchi and I. Aso, IEEE Trans. Components Hybrids Manufact. Technol. CHMT-9 (1986) 386.
N. Iwase, K. Anzai and K. Shinozaki, Solid State Technol. 29(10) (1986) 135.
R. C. Enck, R. D. Harris and J. L. Fields, in Proceedings of the Technology Program, Nepconeast '90, Cahners Exposition Group des Plaines, II, USA (1990) p. 523.
H.-G. Burckhadt and H. Vavra, in Proceedings of the 7th European ISHM Conference, Hamburg, May 1989, p. 24.
T. Kubota, J. Ishigame, S. Chiba and S. Sekihara, in Proceedings of the 5th International Microelectronics Conference, Tokyo, May 1988, edited by ISHM Japan Chapter, p. 137.
D. Bonfert and A. Drost, Verbindungstechnik in der Elektronik Vol. 2(1) (1990) p. 8.
J. Ishigame, T. Kubota, S. Sekihara and K. Fujimura, in ISHM 88 Proceedings of International Symposium on Microelectronics, Seattle, Wa, 1988, edited by the Technical Program Committee and the ISHM staff, p. 349.
E. G. Wilkins, D. M. Mattox and M. R. Riedmeyer, in 1991 Proceedings of International Symposium on Microelectronics, Orlando, Fl, 1991, edited by Technical Program Committee and the ISHM staff, p. 533.
European Patent Application 0306271, August (1988).
D. Chatterji and R. W. Vest, J. Amer. Ceram. Soc. 54 (1971) 73.
M. G. Norton and B. C. H. Steele, in Proceedings of the Advanced Electronic Packaging Materials Symposium, 1990, p. 283.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kretzschmar, C., Otschik, P., Jaenicke-Rößler, K. et al. The reaction between ruthenium dioxide and aluminium nitride in resistor pastes. JOURNAL OF MATERIAL SCIENCE 28, 5713–5716 (1993). https://doi.org/10.1007/BF00365170
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/BF00365170