Abstract
Thin films of pure copper have been deposited on glass and Si(100) substrates using copper acetylacetonate [Cu(acac)2] and copper HexaFluoroAcetylacetonate [Cu(HFA)2] sources. A thermal, cold-wall, reduced pressure (3325–5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) process was employed. The effect of H2O vapor on the grain size, deposition rate, and resistivity was examined. Electrical resistivities of 2.4 μω cm for copper films deposited on Si(100) and 3.44 μω cm for copper films deposited on glass at substrate temperatures of 265° C and a [Cu(acac)2] source temperature of 147° C with the use of H2O vapor were measured. When [Cu(HFA)2] was used, the substrate temperature was 385° C and the source temperature was 85° C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)2] source. A deposition rate of 11 nm/min was obtained with Cu(acac)2 as the source and the rate was 44.4 nm/min with the Cu(HFA)2 source; both were obtained with the use of H2O vapor. No selectivity was observed with either source for either substrate. The deposited films were fully characterized using XRD, LVSEM, SAXPS, and RBS.
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Marzouk, H.A., Kim, J.S., Reucroft, P.J. et al. Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates. Appl. Phys. A 58, 607–613 (1994). https://doi.org/10.1007/BF00348173
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DOI: https://doi.org/10.1007/BF00348173