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Auger-induced rearrangement of an ion-bombarded/SiO2 surface: Influence of electron energy

  • Surfaces And Multilayers
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Abstract

Ion bombardment of SiO2 produces an understoichiometric surface layer containing a distribution of bonding states: SiO2, SiO x and free Si. Under the electron beam probe, a redistribution occurs, favoring the SiO2 and free Si states at the expense of SiO x , without loss of oxygen. The free Si yield exhibits the same energy dependence as the Auger yield of the Si LVV transition, thus pointing to Auger-induced bond rupture as the primary damaging event.

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Authors and Affiliations

  1. Groupe Surfaces-Interfaces, Institut de Physique et de Chimie des Matériaux, Unité Mixte CNRS-ULP-EHICS, 4, rue Blaise Pascal, F-67000, Strasbourg, France

    M. Khellafi & B. Lang

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  1. M. Khellafi
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  2. B. Lang
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Khellafi, M., Lang, B. Auger-induced rearrangement of an ion-bombarded/SiO2 surface: Influence of electron energy. Appl. Phys. A 50, 183–187 (1990). https://doi.org/10.1007/BF00343416

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  • DOI: https://doi.org/10.1007/BF00343416

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