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Temperature behavior of implanted and pulsed laser irradiated GaAs

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Abstract

Recent studies have shown that the Low-Power Pulsed-Laser Annealing (LPPLA) of ion-implanted GaAs specimens can be realized in a power-density window in which a complete structural reordering is guaranted. As the experimentally employed conditions allow us to describe the theoretical problem in an unidimensional space domain, we describe here a method to investigate the in-depth temperature behavior during the low-power pulsed-laser irradiation of ion-implanted semiconductors. The application of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the critical temperature T c below which the As evaporation rate is negligible.

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Authors and Affiliations

  1. Dipartimento di Energetica, Università degli Studi di Roma “La Sapienza”, Via A. Scarpa 14, I-00161, Roma, Italy

    G. Zollo, L. Palumbo, M. Rossi & G. Vitali

Authors
  1. G. Zollo
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  2. L. Palumbo
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  3. M. Rossi
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  4. G. Vitali
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Zollo, G., Palumbo, L., Rossi, M. et al. Temperature behavior of implanted and pulsed laser irradiated GaAs. Appl. Phys. A 56, 409–411 (1993). https://doi.org/10.1007/BF00332572

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  • DOI: https://doi.org/10.1007/BF00332572

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