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Determination of depth profiling of metal trace impurities on Si surface using total reflection X-ray fluorescence

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  • Inorganic Materials
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Summary

Total reflection X-ray fluorescence (TXRF) is used for non-destructive determination of depth profiling. A numerical processing is presented as impurity quantification in the continuum excitation TXRF without using standards. Dependences of concentration of impurities on depths ranging from a few tens to thousands Angströms are given for Fe and Cu on Si-wafer. The detection limits are in the range of 1010 atoms/cm2. The method was checked with Secondary Ion Mass Spectrometry (SIMS) and the agreement is reasonably good.

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Authors and Affiliations

  1. Institute of High-Energy Physics, P. O. Box 2732, 100080, Beijing, People's Republic of China

    Q. -M. Fan, Y. -W. Liu, D. -L. Li & C. -L. Wei

Authors
  1. Q. -M. Fan
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  2. Y. -W. Liu
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  3. D. -L. Li
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  4. C. -L. Wei
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Fan, Q.M., Liu, Y.W., Li, D.L. et al. Determination of depth profiling of metal trace impurities on Si surface using total reflection X-ray fluorescence. Fresenius J Anal Chem 345, 518–520 (1993). https://doi.org/10.1007/BF00326342

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  • DOI: https://doi.org/10.1007/BF00326342

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